PART |
Description |
Maker |
2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA1705 |
Bipolar Transistor Adoption of FBET process
|
ON Semiconductor
|
VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VP |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV Hybrid intergrated circuits/with FBET/LSBT process chips/Wide bandwidth video output ICs
|
SANYO[Sanyo Semicon Device]
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY 16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|